414 lines
26 KiB
HTML
414 lines
26 KiB
HTML
<!DOCTYPE html>
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<meta name="viewport" content="width=device-width, initial-scale=1.0">
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<title>深度行研报告：半导体混合键合技术</title>
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<script src="https://cdn.tailwindcss.com"></script>
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<link href="https://cdn.jsdelivr.net/npm/daisyui@4.10.1/dist/full.min.css" rel="stylesheet" type="text/css" />
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</head>
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<body class="text-slate-300 min-h-screen p-4 sm:p-8">
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<div class="max-w-7xl mx-auto">
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<!-- Header -->
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<header class="text-center mb-12">
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<h1 class="fui-title text-4xl md:text-6xl font-bold text-cyan-300 mb-2">半导体混合键合技术</h1>
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<p class="text-lg md:text-xl text-purple-300">深度行研报告</p>
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<p class="text-xs text-slate-500 mt-4">由 北京价值前沿科技有限公司 AI投研agent：“价小前投研” 进行投研呈现 | 本报告为AI合成数据，投资需谨慎。</p>
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</header>
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<!-- Bento Grid Layout -->
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<main class="bento-grid">
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<!-- Core Insight -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-7">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">核心观点 & 市场逻辑</h2>
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<p class="mb-4 text-base font-medium text-slate-200">
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半导体混合键合技术是应对后摩尔时代性能瓶颈的颠覆性解决方案，正从CIS、NAND等成熟应用领域，向HBM、先进逻辑芯片等高价值市场加速渗透。当前已越过技术验证期，进入<strong class="text-purple-300">产业化导入和商业价值兑现的关键阶段</strong>。
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</p>
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<div class="glow-divider"></div>
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<h3 class="font-semibold text-cyan-400 text-lg mb-2">核心驱动力：物理极限倒逼下的技术代际革命</h3>
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<ul class="space-y-3 list-disc list-inside text-slate-300">
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<li><strong class="text-slate-100">性能驱动：</strong>传统TCB键合技术凸点间距极限约10μm，无法满足HBM4/5及未来SoC对I/O密度翻倍的需求。混合键合将互联间距缩短至<strong class="text-purple-400">亚微米级(0.5-0.1μm)</strong>，互联密度提升<strong class="text-purple-400">15倍</strong>以上，能耗降低<strong class="text-purple-400">20倍</strong>，是未来高性能计算的唯一路径。</li>
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<li><strong class="text-slate-100">成本与良率驱动 (NAND)：</strong>长江存储的Xtacking架构证明，通过将逻辑与存储单元分离制造再键合，可优化芯片面积、缩短开发周期并提升良率，在NAND层数不断增加的背景下展现出显著商业化优势。</li>
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<li><strong class="text-slate-100">国产化驱动：</strong>在高端光刻机制程受限背景下，通过混合键合等先进封装技术实现芯片3D堆叠，是绕开制程瓶颈、提升系统性能的<strong class="text-purple-400">“换道超车”</strong>战略选择，具备强烈的政策和产业驱动力。</li>
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</ul>
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</section>
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<!-- Market Size Chart -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-5">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">市场规模预测</h2>
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<div id="market-size-chart" class="w-full h-80"></div>
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</section>
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<!-- Catalysts & Path -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-8">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">关键催化剂与发展路径</h2>
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<div class="mb-6">
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<h3 class="font-semibold text-cyan-400 text-lg mb-2">近期催化剂 (未来3-6个月)</h3>
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<ul class="space-y-2 list-disc list-inside">
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<li><strong class="text-slate-100">三星V10 NAND量产验证：</strong>采用长江存储混合键合专利的成功，将是对技术路线的强力背书。</li>
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<li><strong class="text-slate-100">国产设备厂商重复订单公告：</strong>拓荆科技、迈为股份、百傲化学等若披露批量订单，将是设备进入量产工具的直接证据。</li>
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<li><strong class="text-slate-100">HBM厂商技术路线图更新：</strong>SK海力士、三星等对HBM5采用混合键合的官方确认，将消除市场对应用节奏的不确定性。</li>
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</ul>
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</div>
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<div class="glow-divider"></div>
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<div>
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<h3 class="font-semibold text-cyan-400 text-lg mb-3">长期发展路径</h3>
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<ul class="steps steps-vertical lg:steps-horizontal w-full">
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<li class="step step-primary" data-content="✓">
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<div class="text-left ml-2"><strong class="text-slate-100">第一阶段 (当前-2025)</strong><br>应用扩散期 (NAND & CIS)</div>
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</li>
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<li class="step step-primary">
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<div class="text-left ml-2"><strong class="text-slate-100">第二阶段 (2026-2028)</strong><br>HBM驱动的爆发期</div>
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</li>
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<li class="step">
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<div class="text-left ml-2"><strong class="text-slate-100">第三阶段 (2028以后)</strong><br>全平台渗透期 (SoC, 硅光)</div>
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</li>
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</ul>
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</div>
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</section>
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<!-- Technical Deep Dive -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-4">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">技术解析</h2>
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<p class="mb-3"><strong class="text-slate-100">定义：</strong>一种新兴半导体封装技术，通过铜触点实现不同晶圆间的直接电气互联，无需金属引线或微凸点，实现亚微米级键合精度。</p>
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<div class="mb-3">
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<strong class="text-slate-100">分类：</strong>
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<ul class="list-disc list-inside ml-2">
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<li><strong>W2W (晶圆对晶圆):</strong> 成熟度高，但无法提前识别失效颗粒。</li>
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<li><strong>D2W (芯片对晶圆):</strong> 速率慢，但可筛选芯片，提升整体良率。</li>
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</ul>
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</div>
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<div class="overflow-x-auto">
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<table class="table table-sm">
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<thead>
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<tr class="text-cyan-400">
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<th>特性</th>
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<th>混合键合</th>
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<th>热压键合 (TCB)</th>
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</tr>
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</thead>
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<tbody>
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<tr>
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<th>精度</th>
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<td class="text-purple-400">0.5-0.1μm</td>
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<td>5-1μm</td>
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</tr>
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<tr>
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<th>密度 (/mm²)</th>
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<td class="text-purple-400">10K-1MM</td>
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<td>156-625</td>
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</tr>
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<tr>
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<th>能耗/比特</th>
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<td class="text-purple-400"><0.05pJ</td>
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<td>0.1pJ</td>
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</tr>
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</tbody>
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</table>
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</div>
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</section>
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<!-- Expectation Gap -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-6">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">预期差分析</h2>
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<ul class="space-y-3 list-disc list-inside">
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<li><strong class="text-slate-100">HBM应用节奏差：</strong>市场期待HBM4大规模应用，但因JEDEC放宽封装厚度至<strong class="text-purple-400">775μm</strong>，TCB仍具成本优势，导致混合键合在HBM上的应用时间表<strong class="text-red-400">有所延迟</strong>。真正放量拐点可能在HBM4E或<strong class="text-purple-400">HBM5 (约2028年)</strong>。</li>
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<li><strong class="text-slate-100">国产替代深度差：</strong>市场对国产设备“0到1”突破非常兴奋，但路演揭示国产设备仍在<strong class="text-amber-400">验证和持续替代阶段</strong>，在原子级对准精度、超洁净环境控制(Class 1)和工艺稳定性方面与海外龙头仍有差距，市场可能<strong class="text-red-400">高估了短期全面替代</strong>的可能性。</li>
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<li><strong class="text-slate-100">技术路线认知差：</strong>市场倾向于将混合键合视为单一技术，但W2W和D2W路径选择及技术难点不同。NAND多采用W2W，而HBM等更复杂场景需攻克D2W，市场对此认知可能不够精细。</li>
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</ul>
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</section>
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<!-- Risks -->
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<section class="grid-item glass-card p-6 col-span-12 lg:col-span-6">
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<h2 class="fui-title text-2xl font-bold text-cyan-300 mb-4">潜在风险与挑战</h2>
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<div class="tabs tabs-boxed bg-slate-900/50 mb-4">
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<a class="tab tab-active">技术风险</a>
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<a class="tab">商业化风险</a>
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<a class="tab">政策风险</a>
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</div>
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<ul class="space-y-3 list-disc list-inside">
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<li><strong class="text-slate-100">良率瓶颈：</strong>技术对颗粒污染、表面平整度(CMP要求达0.5nm)、对准精度要求极为苛刻，任何微小缺陷都可能导致芯片报废，是商业化的核心挑战。</li>
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<li><strong class="text-slate-100">翘曲问题：</strong>异质材料集成会产生应力导致晶圆翘曲，影响键合精度，是3D堆叠中的普遍难题。</li>
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<li><strong class="text-slate-100">高昂成本：</strong>设备投资巨大，工艺复杂，导致初始成本高昂。若无法有效降低成本，将阻碍其推广速度。</li>
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<li><strong class="text-slate-100">设备制裁风险：</strong>美国可能对先进封装设备施加出口限制，这将更加依赖国产替代的突破进程。</li>
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</ul>
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</section>
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<!-- Rise Analysis -->
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<section class="col-span-12 mt-8">
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<h2 class="fui-title text-3xl font-bold text-cyan-300 mb-6 text-center">相关个股异动分析</h2>
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<div class="space-y-4">
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<div class="collapse collapse-arrow glass-card" x-data="{ open: false }">
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<input type="radio" name="rise-accordion" @click="open = !open" />
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<div class="collapse-title text-xl font-medium text-slate-100">
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勤上股份 (002638) - 2025-11-05
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</div>
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<div class="collapse-content">
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<div class="prose prose-sm max-w-none text-slate-300" x-html="`核心结论<br>11-05午间公告：拟30亿元投建2.5D/3D先进封装项目，现金壳公司0→1切入半导体赛道，触发估值切换。<br><br>驱动概念<br>半导体先进封装+算力基建+储能<br><br>个股异动解析<br>1. 消息面<br>（1）半导体先进封装：板块亮点——混合键合设备需求5年CAGR>35%，国产替代加速。<br>- 2025-11-05《关于签署〈半导体先进封装项目投资框架协议〉的公告》：与东莞黄江镇政府、赛富兆丰基金共建60万片/月2.5D/3D封装产能，一期总投资30亿元，公司出资15亿元（占账面现金14.8亿几乎全部）。<br>- 政府配套200亩工业用地+5亿元设备补贴+三年所得税全额奖励；6个月内须完成正式合同并提交股东大会。<br><br>（2）算力基建：板块亮点——AI芯片高I/O需求倒逼先进封装。<br>- 项目明确服务“国产AI加速卡、3D DRAM、HBM”客户，直接对接算力芯片封装缺口。<br><br>2. 基本面<br>- 现金充足：2025Q3货币资金14.8亿元，无有息负债，现金/市值≈46%，具备一次性重资产投入能力。<br>- 传统LED照明业务连续亏损，转型需求迫切。`"></div>
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</div>
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</div>
|
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<div class="collapse collapse-arrow glass-card" x-data="{ open: false }">
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<input type="radio" name="rise-accordion" @click="open = !open" />
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||
<div class="collapse-title text-xl font-medium text-slate-100">
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||
通富微电 (002156) - 2025-09-24
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||
</div>
|
||
<div class="collapse-content">
|
||
<div class="prose prose-sm max-w-none text-slate-300" x-html="`核心结论<br>存储合约价四季度再涨15~30%触发板块β，通富微电因“HBM+Chiplet”高端封测产能直接挂钩三星/SK海力士，成为涨价→资本开支→封测订单回升的最短传导标的，资金抢筹封板。<br><br>驱动概念<br>存储涨价+先进封装+Chiplet<br><br>个股异动解析<br>1. 消息面<br>（1）存储芯片：Q4合约价再涨15~30%，三星平泽P3、SK海力士M16追加设备订单。-公司苏州+槟城基地70%产能配套HBM/HDDR5，9月产能利用率三周回升15pct至85%；-长江存储二期3D NAND封测线招标落地，公司中标3条线共4.2万片/月，2026年初投产。<br>（2）先进封装：微软9-24发布晶圆级微流道液冷，需封装端集成散热结构。-公司Chiplet技术国内领先，已导入AMD MI300与英伟达HPC样品，可兼容微通道封装。`"></div>
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</div>
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</div>
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</div>
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</section>
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|
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<!-- Core Companies Table -->
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<section class="col-span-12 mt-8">
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<h2 class="fui-title text-3xl font-bold text-cyan-300 mb-6 text-center">产业链核心标的</h2>
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<div class="overflow-x-auto glass-card rounded-2xl p-2">
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<table class="table w-full">
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<thead>
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<tr class="text-cyan-400 text-base border-b border-slate-700">
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<th>股票名称</th>
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<th>股票代码</th>
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<th class="w-2/5">核心逻辑</th>
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<th>标签</th>
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</tr>
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||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">拓荆科技</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=688072" target="_blank" class="link link-hover text-purple-300">688072</a></td>
|
||
<td>晶圆对晶圆混合键合设备、芯片对晶圆键合前表面预处理设备获得重复订单并扩大产业化应用，芯片对晶圆混合键合产品已获得客户订单并出货</td>
|
||
<td><div class="badge badge-primary badge-outline">设备</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">安集科技</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=688019" target="_blank" class="link link-hover text-purple-300">688019</a></td>
|
||
<td>混合键合工艺对晶圆表面平整度要求极高，CMP抛光液是不可或缺的关键耗材，公司为国内龙头直接受益。</td>
|
||
<td><div class="badge badge-accent badge-outline">耗材</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">迈为股份</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=300751" target="_blank" class="link link-hover text-purple-300">300751</a></td>
|
||
<td>自主研发的全自动晶圆级混合键合设备交付国内客户，技术指标领先（对位精度<100nm）</td>
|
||
<td><div class="badge badge-primary badge-outline">设备</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">百傲化学</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=603360" target="_blank" class="link link-hover text-purple-300">603360</a></td>
|
||
<td>参股公司芯慧联新（持股10.48%）主营业务之一为混合键合设备，宣称D2W设备为全球首台一体机</td>
|
||
<td><div class="badge badge-primary badge-outline">设备</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">北方华创</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=002371" target="_blank" class="link link-hover text-purple-300">002371</a></td>
|
||
<td>参股北京诺合键维设备公司，对混合键合等前沿技术方向保持高度关注</td>
|
||
<td><div class="badge badge-primary badge-outline">设备</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">华天科技</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=002185" target="_blank" class="link link-hover text-purple-300">002185</a></td>
|
||
<td>基于混合键合的晶圆级CMOS图像传感器三维集成技术研究</td>
|
||
<td><div class="badge badge-secondary badge-outline">技术专利</div></td>
|
||
</tr>
|
||
<tr class="border-b border-slate-800 hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">天承科技</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=688603" target="_blank" class="link link-hover text-purple-300">688603</a></td>
|
||
<td>公司研发混合键合工艺等相关添加剂产品和应用技术，目前正努力推广中</td>
|
||
<td><div class="badge badge-accent badge-outline">耗材</div></td>
|
||
</tr>
|
||
<tr class="hover:bg-slate-800/20">
|
||
<td class="font-bold text-slate-100">江波龙</td>
|
||
<td><a href="https://valuefrontier.cn/company?scode=301308" target="_blank" class="link link-hover text-purple-300">301308</a></td>
|
||
<td>子公司元成苏州具备多层封装、混合键合封装技术的量产能力</td>
|
||
<td><div class="badge badge-secondary badge-outline">技术专利</div></td>
|
||
</tr>
|
||
</tbody>
|
||
</table>
|
||
</div>
|
||
</section>
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return params[0].name + '<br/>' + params[0].seriesName + ' : ' + params[0].value + ' 亿元';
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// 2.7亿美元 (汇率~7.2)
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(2.7 * 7.2).toFixed(2),
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// 7.4亿美元 (汇率~7.2)
|
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(7.4 * 7.2).toFixed(2),
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// 28亿欧元 (汇率~8)
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(28 * 8).toFixed(2)
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