505 lines
35 KiB
HTML
505 lines
35 KiB
HTML
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<title>深度行业研究报告:第三代半导体</title>
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background-image:
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<body class="min-h-screen">
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<div class="container mx-auto p-4 md:p-8">
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<!-- Header -->
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<header class="text-center mb-12">
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<h1 class="text-4xl md:text-6xl font-bold glow-text tracking-widest">
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深度行业研究报告
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</h1>
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<h2 class="text-2xl md:text-4xl font-semibold text-cyan-200 mt-4 tracking-wide">
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第三代半导体
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</h2>
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<p class="mt-6 text-sm text-gray-400 max-w-4xl mx-auto">
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北京价值前沿科技有限公司 AI投研agent:“价小前投研” 进行投研呈现,本报告为AI合成数据,投资需谨慎。
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</p>
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</header>
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<!-- Main Content Grid -->
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<main class="bento-grid">
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<!-- Insight: Core Logic -->
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<section class="bento-item lg:bento-item-main glass-card p-6 rounded-3xl">
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<h3 class="text-2xl font-bold section-title">核心逻辑与市场认知分析</h3>
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<div class="space-y-6 text-gray-300">
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<div>
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<h4 class="font-semibold text-lg text-cyan-300 mb-2">核心驱动力</h4>
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<ol class="list-decimal list-inside space-y-2">
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<li><strong>政策驱动 (顶层设计与国家意志):</strong> 从商务部推动国家级创新中心,到上海市支持产业攻关,再到工信部将相关材料纳入战略目录,均表明第三代半导体是国家实现科技自立自强、保障产业链安全的核心环节。</li>
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<li><strong>技术迭代 (性能优势):</strong> SiC、GaN具备耐高压、耐高温、高频率、低损耗的物理特性,在新能源汽车、数据中心、5G通信等高要求场景中成为必然选择。“在太空成功验证”更是对其性能优势的极致证明。</li>
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<li><strong>市场拉动 (商业化落地):</strong> 已脱离纯粹的故事阶段。中瓷电子的SiC业务已主要配套比亚迪;英诺赛科的车规级GaN产品出货量同比增长986.7%。新能源汽车、消费电子快充等真实且庞大的市场需求,提供了清晰的商业化路径。</li>
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</ol>
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</div>
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<div>
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<h4 class="font-semibold text-lg text-cyan-300 mb-2">市场热度与情绪</h4>
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<p>市场热度极高。“第三代半导体”作为一个高频标签,与“华为”、“人工智能”等顶级热点并列出现,表明其在资本市场中的高度关注度。市场情绪整体乐观,主要基于其广阔的市场空间和国产替代的宏大叙事。</p>
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</div>
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<div>
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<h4 class="font-semibold text-lg text-red-400 mb-2">预期差分析 (关键)</h4>
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<ul class="list-disc list-inside space-y-2">
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<li><strong>“高增长”叙事 vs “价格战”现实:</strong> 市场普遍认知是蓝海市场,但天域半导体研报揭示价格正在急剧下滑。6英寸外延片均价从2022年的9631元降至2025年的3138元。行业为抢占份额已进入激烈“价格战”,盈利能力面临严峻考验,与市场普遍乐观预期存在显著温差。</li>
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<li><strong>“全面开花”预期 vs “结构性分化”进展:</strong> 市场的宏大叙事可能掩盖了细分环节的短期压力。例如华虹半导体提到“高压MOSFET表现疲软”,表明即使在功率半导体大赛道内,不同产品的景气度也存在分化。</li>
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<li><strong>“国产替代”的复杂性:</strong> 市场可能低估了国际巨头的竞争压力。英飞凌投资50亿欧元建设全球最大的200毫米SiC晶圆厂,并已获50亿欧元设计订单,表明国际龙头正通过规模和技术优势巩固护城河,国产替代之路并非坦途。</li>
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</ul>
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</div>
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</div>
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</section>
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<!-- Insight: Core View Summary -->
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<section class="bento-item lg:bento-item-side-top glass-card p-6 rounded-3xl flex flex-col justify-center">
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<h3 class="text-xl font-bold section-title">核心观点摘要</h3>
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<p class="text-gray-300 leading-relaxed">
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第三代半导体正处在由<strong class="text-cyan-400">政策强力驱动</strong>与<strong class="text-sky-400">下游市场需求爆发</strong>双轮驱动的<strong class="text-violet-400">高速成长期</strong>。其核心驱动力源于以新能源汽车和数据中心为代表的应用场景对高效率、高功率密度器件的迫切需求,叠加国家层面为实现“自主可控”而提供的全方位支持。未来潜力巨大,但将面临<strong class="text-red-400">成本下降、技术迭代与国际巨头竞争</strong>的三重考验。
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</p>
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</section>
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<!-- Insight: Catalysts & Future Path -->
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<section class="bento-item lg:bento-item-side-mid glass-card p-6 rounded-3xl">
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<h3 class="text-xl font-bold section-title">关键催化剂与发展路径</h3>
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<div class="space-y-4 text-gray-300">
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<div>
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<h4 class="font-semibold text-cyan-400">近期催化剂 (3-6个月)</h4>
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<ul class="list-disc list-inside text-sm">
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<li>中车时代电气“宜兴三期项目”投产验证。</li>
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<li>“全国产主驱碳化硅模块”批量上车事件。</li>
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<li>国家大基金三期具体项目落地和资金拨付。</li>
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</ul>
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</div>
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<div>
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<h4 class="font-semibold text-sky-400">长期发展路径</h4>
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<ul class="list-disc list-inside text-sm">
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<li><strong>当前-2025:</strong> 国产化导入期 (技术验证/产能建设)</li>
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<li><strong>2026-2028:</strong> 成本驱动渗透期 (成本下降/规模化应用)</li>
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<li><strong>2028以后:</strong> 成熟竞争期 (格局清晰/全球竞争)</li>
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</ul>
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</div>
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</div>
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</section>
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<!-- Insight: Risks & Challenges -->
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<section class="bento-item lg:bento-item-side-bottom glass-card p-6 rounded-3xl">
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<h3 class="text-xl font-bold section-title">潜在风险与挑战</h3>
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<ul class="space-y-2 text-red-300 text-sm">
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<li><strong class="text-red-400">技术风险:</strong> SiC良率与成本控制是核心瓶颈,8英寸升级挑战大;下一代材料可能颠覆现有路线。</li>
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<li><strong class="text-red-400">商业化风险:</strong> 成本是最大风险,过快价格战可能损害全行业盈利能力。</li>
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<li><strong class="text-red-400">竞争风险:</strong> 美国半导体制裁带来不确定性;英飞凌等国际巨头扩产降价,压制追赶者。</li>
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<li><strong class="text-red-400">交叉验证风险:</strong> 行业规模高增长(GaN CAGR 98.5%)与龙头产品ASP腰斩的矛盾,需警惕“增收不增利”。</li>
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</ul>
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</section>
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<!-- Chart -->
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<section class="bento-item lg:bento-item-chart glass-card p-6 rounded-3xl h-96">
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<h3 class="text-xl font-bold section-title">市场规模预测</h3>
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<div id="market-chart" class="w-full h-80"></div>
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</section>
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<!-- Timeline -->
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<section class="bento-item lg:bento-item-timeline glass-card p-6 rounded-3xl h-96 overflow-y-auto">
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<h3 class="text-xl font-bold section-title">概念发展关键事件</h3>
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<ul class="timeline">
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<li class="timeline-item">
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<strong class="text-cyan-300">2021年及以前: 政策奠基</strong>
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<p class="text-sm text-gray-400">国家发布重点研发计划和新材料指导目录,明确支持SiC、GaN关键技术,奠定战略基调。</p>
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</li>
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<li class="timeline-item">
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<strong class="text-cyan-300">2024年6月6日: 成本拐点</strong>
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<p class="text-sm text-gray-400">华金电子会议披露国内SiC MOSFET价格大幅下降,显示国产替代加速,进入商业化放量节点。</p>
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</li>
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<li class="timeline-item">
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<strong class="text-cyan-300">2025年: 应用里程碑</strong>
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<p class="text-sm text-gray-400">某公司计划完成“全国产主驱碳化硅模块的批量上车”,是国产SiC在核心应用领域的关键突破。</p>
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</li>
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<li class="timeline-item">
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<strong class="text-cyan-300">2025年8月: 技术验证</strong>
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<p class="text-sm text-gray-400">我国在太空成功验证SiC功率器件,展示了其在极端环境下的高可靠性,为高端应用打开空间。</p>
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</li>
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<li class="timeline-item">
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<strong class="text-cyan-300">2025年9月24日: 概念外延</strong>
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<p class="text-sm text-gray-400">六部委文件首次将“金刚石半导体”纳入规划,将概念范畴拓展至第四代半导体。</p>
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</li>
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</ul>
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</section>
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<!-- Data Sources: Tabs -->
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<section x-data="{ tab: 'news' }" class="bento-item bento-item-full glass-card p-6 rounded-3xl">
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<div class="tabs tabs-boxed bg-black/20">
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<a class="tab" :class="{ 'tab-active': tab === 'news' }" @click.prevent="tab = 'news'">新闻数据</a>
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<a class="tab" :class="{ 'tab-active': tab === 'roadshows' }" @click.prevent="tab = 'roadshows'">路演纪要</a>
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<a class="tab" :class="{ 'tab-active': tab === 'reports' }" @click.prevent="tab = 'reports'">核心研报</a>
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</div>
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<div class="py-4">
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<!-- News Content -->
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<div x-show="tab === 'news'" class="space-y-2">
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<div class="collapse collapse-plus bg-base-200/50">
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<input type="radio" name="news-accordion" checked="checked" />
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<div class="collapse-title text-xl font-medium text-sky-300">国家政策与平台建设</div>
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<div class="collapse-content text-gray-300 text-sm">
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<ul class="list-disc list-inside space-y-2">
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<li><strong>商务部:</strong> 印发《支持苏州工业园区深化开放创新综合试验的若干措施》,推动国家第三代半导体技术创新中心(苏州)等先进技术平台高质量发展。</li>
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<li><strong>上海市:</strong> 支持企业加快先进制程电子化学品、集成电路工艺及装备材料、第三代半导体(碳化硅、氮化镓等)攻关,推动20个产品形成批量供应能力。</li>
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</ul>
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</div>
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</div>
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<div class="collapse collapse-plus bg-base-200/50">
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<input type="radio" name="news-accordion" />
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<div class="collapse-title text-xl font-medium text-sky-300">技术突破与前沿应用</div>
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<div class="collapse-content text-gray-300 text-sm">
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<ul class="list-disc list-inside space-y-2">
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<li><strong>航天应用验证成功:</strong> 我国在太空成功验证了首款国产碳化硅(SiC)功率器件,第三代半导体材料有望牵引我国航天电源升级换代,为探月工程、载人登月、深空探测等领域提供新一代功率器件。</li>
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</ul>
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</div>
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</div>
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<div class="collapse collapse-plus bg-base-200/50">
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<input type="radio" name="news-accordion" />
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<div class="collapse-title text-xl font-medium text-sky-300">企业动态与产业合作</div>
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<div class="collapse-content text-gray-300 text-sm">
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<ul class="list-disc list-inside space-y-2">
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<li><strong>天富能源 & 天科合达:</strong> 天科合达(国内唯一能量产6英寸SiC衬底及外延片,全球市占率12.8%)注入天富能源预期极大,公司向“电网+第三代半导体”双主业转型。</li>
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<li><strong>万业企业:</strong> 与国家第三代半导体技术创新中心(苏州)签署全面战略合作协议,共同培育重大项目。</li>
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<li><strong>东微半导:</strong> 第三代半导体已形成销售并持续出货。</li>
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<li><strong>安泰科技:</strong> 为GaN材料MOCVD设备提供核心材料部件,高性能非晶、纳米晶产品受益。</li>
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<li><strong>博敏电子:</strong> AMB陶瓷衬板在第三代半导体功率模块头部企业量产应用。</li>
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</ul>
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</div>
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</div>
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</div>
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<!-- Roadshows Content -->
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<div x-show="tab === 'roadshows'" class="space-y-2">
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<div class="collapse collapse-plus bg-base-200/50">
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<input type="radio" name="roadshow-accordion" checked="checked" />
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<div class="collapse-title text-xl font-medium text-sky-300">光大证券:半导体金属深度报告 (2024-01-24)</div>
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<div class="collapse-content text-gray-300 text-sm">
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<ul class="list-disc list-inside space-y-2">
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<li><strong>核心观点:</strong> 第三代半导体渗透率提升,氮化镓(GaN)和碳化硅(SiC)增速远超传统硅晶圆 (CAGR分别为25.4%、17%)。</li>
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||
<li><strong>风险提示:</strong> 新材料如氧化镓、金刚石的突破可能改变格局。</li>
|
||
<li><strong>相关标的:</strong> 中国铝业 (sh601600),镓产能200吨/年,受益于化合物半导体扩张。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
<div class="collapse collapse-plus bg-base-200/50">
|
||
<input type="radio" name="roadshow-accordion" />
|
||
<div class="collapse-title text-xl font-medium text-sky-300">中瓷电子路演 (2025-04-24)</div>
|
||
<div class="collapse-content text-gray-300 text-sm">
|
||
<ul class="list-disc list-inside space-y-2">
|
||
<li><strong>核心议题:</strong> 公司通过内生外延拓展至第三代半导体领域。</li>
|
||
<li><strong>关键数据:</strong> 碳化硅(国联万众) 2023年功率器件市场规模150亿元(同比+45%),主要配套比亚迪。</li>
|
||
<li><strong>成长驱动:</strong> 第三代半导体受益于5G基站(氮化镓)和新能源汽车(碳化硅)。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
<div class="collapse collapse-plus bg-base-200/50">
|
||
<input type="radio" name="roadshow-accordion" />
|
||
<div class="collapse-title text-xl font-medium text-sky-300">华金电子IC设计电话会议 (2024-06-06)</div>
|
||
<div class="collapse-content text-gray-300 text-sm">
|
||
<ul class="list-disc list-inside space-y-2">
|
||
<li><strong>碳化硅(SiC)趋势:</strong> 国内SiC MOSFET价格降至3000元/颗,显著低于海外,加速国产替代。2024年订单开始落地。</li>
|
||
<li><strong>技术水平:</strong> 国内在碳化硅、氮化镓领域技术接近全球领先水平,全球化布局加速。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
</div>
|
||
|
||
<!-- Reports Content -->
|
||
<div x-show="tab === 'reports'" class="space-y-2">
|
||
<div class="collapse collapse-plus bg-base-200/50">
|
||
<input type="radio" name="report-accordion" checked="checked" />
|
||
<div class="collapse-title text-xl font-medium text-sky-300">天域半导体(2658.HK)研报</div>
|
||
<div class="collapse-content text-gray-300 text-sm">
|
||
<ul class="list-disc list-inside space-y-2">
|
||
<li><strong>行业地位:</strong> 中国最大、全球第三大的自制碳化硅外延片制造商,中国市场销量占32.5%。</li>
|
||
<li><strong>产品与产能:</strong> 已实现8英寸外延片量产,成为增长新引擎,毛利率高达49.8%。</li>
|
||
<li><strong>风险因素:</strong> 核心产品价格承压,6英寸外延片平均售价从2022年9631元/片降至2025年3138元/片。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
<div class="collapse collapse-plus bg-base-200/50">
|
||
<input type="radio" name="report-accordion" />
|
||
<div class="collapse-title text-xl font-medium text-sky-300">英诺赛科(02577.HK)研报</div>
|
||
<div class="collapse-content text-gray-300 text-sm">
|
||
<ul class="list-disc list-inside space-y-2">
|
||
<li><strong>行业地位:</strong> 全球首家实现量产8英寸硅基氮化镓(GaN-on-Si)晶圆的企业,全球唯一具备全电压谱系产品量产能力。</li>
|
||
<li><strong>市场前景:</strong> 预计全球GaN功率器件市场将从2024年的32亿元增长至2028年的501亿元,CAGR高达98.5%。</li>
|
||
<li><strong>核心竞争力:</strong> 采用IDM模式,拥有全球最大的8英寸GaN功率晶圆生产基地。车规级产品2024年出货量同比增长986.7%。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
<div class="collapse collapse-plus bg-base-200/50">
|
||
<input type="radio" name="report-accordion" />
|
||
<div class="collapse-title text-xl font-medium text-sky-300">行业宏观动态</div>
|
||
<div class="collapse-content text-gray-300 text-sm">
|
||
<ul class="list-disc list-inside space-y-2">
|
||
<li><strong>国际巨头动态:</strong> 英飞凌投资50亿欧元在马来西亚建设全球最大200毫米(8英寸)SiC功率半导体晶圆厂,已获价值50亿欧元设计订单。</li>
|
||
<li><strong>市场规模:</strong> TrendForce预测,2028年全球碳化硅功率器件市场规模将达91.7亿美元。</li>
|
||
<li><strong>国家政策:</strong> 《国家重点研发计划》等文件明确支持8英寸GaN、大尺寸SiC衬底等技术产业化。</li>
|
||
</ul>
|
||
</div>
|
||
</div>
|
||
</div>
|
||
</div>
|
||
</section>
|
||
|
||
<!-- Rise Analysis -->
|
||
<section class="bento-item bento-item-full glass-card p-6 rounded-3xl">
|
||
<h3 class="text-2xl font-bold section-title">涨幅异动分析</h3>
|
||
<div class="grid grid-cols-1 md:grid-cols-2 lg:grid-cols-3 gap-4">
|
||
<div class="card bg-base-200/50 shadow-xl">
|
||
<div class="card-body">
|
||
<h2 class="card-title text-cyan-300">黄河旋风 (600172) - 10.08%</h2>
|
||
<p class="text-sm text-gray-300"><strong>核心逻辑:</strong> 六部委文件首次将“金刚石半导体”纳入国家第三代半导体产业规划,公司拥有国内稀缺的电子级金刚石衬底小批量产能,政策催化+供给稀缺共振。</p>
|
||
</div>
|
||
</div>
|
||
<div class="card bg-base-200/50 shadow-xl">
|
||
<div class="card-body">
|
||
<h2 class="card-title text-cyan-300">必得科技 (605298) - 10.0%</h2>
|
||
<p class="text-sm text-gray-300"><strong>核心逻辑:</strong> 半导体产业资本溢价举牌,并将公司高铁制动碳陶产线升级为“车规级SiC功率器件散热基板”产线,已锁定IDM客户1.2亿元订单,完成赛道切换。</p>
|
||
</div>
|
||
</div>
|
||
<div class="card bg-base-200/50 shadow-xl">
|
||
<div class="card-body">
|
||
<h2 class="card-title text-cyan-300">圣晖集成 (603163) - 10.0%</h2>
|
||
<p class="text-sm text-gray-300"><strong>核心逻辑:</strong> 中标台积电3nm扩产28亿元洁净室大单,叠加国家大基金三期将“洁净室及厂务系统”列为重点支持方向,业绩高增确定性强化。</p>
|
||
</div>
|
||
</div>
|
||
</div>
|
||
</section>
|
||
|
||
<!-- Stock List Table -->
|
||
<section class="bento-item bento-item-full glass-card p-6 rounded-3xl">
|
||
<h3 class="text-2xl font-bold section-title">相关概念股梳理</h3>
|
||
<div class="overflow-x-auto">
|
||
<table class="table table-zebra w-full">
|
||
<thead>
|
||
<tr class="text-cyan-200">
|
||
<th>股票名称</th>
|
||
<th>股票代码</th>
|
||
<th>核心逻辑</th>
|
||
<th>技术路线</th>
|
||
<th>产业链环节</th>
|
||
</tr>
|
||
</thead>
|
||
<tbody>
|
||
<!-- SiC Stocks -->
|
||
<tr class="font-bold text-white"><td colspan="5" class="bg-cyan-900/50">碳化硅 (SiC) 产业链</td></tr>
|
||
<tr><td>天岳先进</td><td><a href="https://valuefrontier.cn/company?scode=688234" target="_blank" class="link link-hover text-sky-400">688234</a></td><td>从事碳化硅(SiC)衬底业务</td><td>碳化硅(SiC)</td><td>衬底</td></tr>
|
||
<tr><td>露笑科技</td><td><a href="https://valuefrontier.cn/company?scode=002617" target="_blank" class="link link-hover text-sky-400">002617</a></td><td>从事碳化硅(SiC)衬底业务</td><td>碳化硅(SiC)</td><td>衬底</td></tr>
|
||
<tr><td>东尼电子</td><td>-</td><td>从事碳化硅(SiC)衬底业务</td><td>碳化硅(SiC)</td><td>衬底</td></tr>
|
||
<tr><td>晶盛机电</td><td><a href="https://valuefrontier.cn/company?scode=300316" target="_blank" class="link link-hover text-sky-400">300316</a></td><td>从事碳化硅(SiC)外延及设备业务</td><td>碳化硅(SiC)</td><td>外延/设备</td></tr>
|
||
<tr><td>北方华创</td><td><a href="https://valuefrontier.cn/company?scode=002371" target="_blank" class="link link-hover text-sky-400">002371</a></td><td>从事碳化硅(SiC)外延及设备业务</td><td>碳化硅(SiC)</td><td>外延/设备</td></tr>
|
||
<tr><td>斯达半导</td><td><a href="https://valuefrontier.cn/company?scode=603290" target="_blank" class="link link-hover text-sky-400">603290</a></td><td>从事碳化硅(SiC)器件/模块业务</td><td>碳化硅(SiC)</td><td>器件/模块</td></tr>
|
||
<tr><td>华润微</td><td><a href="https://valuefrontier.cn/company?scode=688396" target="_blank" class="link link-hover text-sky-400">688396</a></td><td>从事碳化硅(SiC)器件业务</td><td>碳化硅(SiC)</td><td>器件</td></tr>
|
||
<tr><td>扬杰科技</td><td><a href="https://valuefrontier.cn/company?scode=300373" target="_blank" class="link link-hover text-sky-400">300373</a></td><td>从事碳化硅(SiC)器件业务</td><td>碳化硅(SiC)</td><td>器件</td></tr>
|
||
<tr><td>三安光电</td><td><a href="https://valuefrontier.cn/company?scode=600703" target="_blank" class="link link-hover text-sky-400">600703</a></td><td>从事碳化硅(SiC)全产业链业务</td><td>碳化硅(SiC)</td><td>全链 (IDM)</td></tr>
|
||
|
||
<!-- GaN Stocks -->
|
||
<tr class="font-bold text-white"><td colspan="5" class="bg-cyan-900/50">氮化镓 (GaN) 产业链</td></tr>
|
||
<tr><td>南大光电</td><td><a href="https://valuefrontier.cn/company?scode=300346" target="_blank" class="link link-hover text-sky-400">300346</a></td><td>从事氮化镓(GaN)衬底业务</td><td>氮化镓(GaN)</td><td>衬底</td></tr>
|
||
<tr><td>海特高新</td><td><a href="https://valuefrontier.cn/company?scode=002023" target="_blank" class="link link-hover text-sky-400">002023</a></td><td>从事氮化镓(GaN)衬底及代工业务</td><td>氮化镓(GaN)</td><td>衬底/代工</td></tr>
|
||
<tr><td>中瓷电子</td><td><a href="https://valuefrontier.cn/company?scode=003031" target="_blank" class="link link-hover text-sky-400">003031</a></td><td>从事氮化镓(GaN)衬底业务</td><td>氮化镓(GaN)</td><td>衬底</td></tr>
|
||
<tr><td>赛微电子</td><td><a href="https://valuefrontier.cn/company?scode=300456" target="_blank" class="link link-hover text-sky-400">300456</a></td><td>从事氮化镓(GaN)外延业务</td><td>氮化镓(GaN)</td><td>外延</td></tr>
|
||
<tr><td>聚灿光电</td><td><a href="https://valuefrontier.cn/company?scode=300708" target="_blank" class="link link-hover text-sky-400">300708</a></td><td>从事氮化镓(GaN)外延业务</td><td>氮化镓(GaN)</td><td>外延</td></tr>
|
||
<tr><td>闻泰科技</td><td><a href="https://valuefrontier.cn/company?scode=600745" target="_blank" class="link link-hover text-sky-400">600745</a></td><td>从事氮化镓(GaN)器件业务</td><td>氮化镓(GaN)</td><td>器件</td></tr>
|
||
<tr><td>捷捷微电</td><td><a href="https://valuefrontier.cn/company?scode=300623" target="_blank" class="link link-hover text-sky-400">300623</a></td><td>从事氮化镓(GaN)器件业务</td><td>氮化镓(GaN)</td><td>器件</td></tr>
|
||
<tr><td>士兰微</td><td><a href="https://valuefrontier.cn/company?scode=600460" target="_blank" class="link link-hover text-sky-400">600460</a></td><td>从事氮化镓(GaN)全产业链业务</td><td>氮化镓(GaN)</td><td>全链 (IDM)</td></tr>
|
||
</tbody>
|
||
</table>
|
||
</div>
|
||
</section>
|
||
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||
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|
||
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|
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// Assuming a ~30% CAGR, 2024 would be around 3.3B USD.
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